THE ROLE OF TRANSIENT DAMAGE ANNEALING IN SHALLOW JUNCTION FORMATION

被引：15

作者：

FAIR, RB ^{[1
]}

机构：

[1] DUKE UNIV,DEPT ELECT ENGN,DURHAM,NC 27706

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90206-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：371 / 378

页数：8

共 28 条

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FAIR, RB ;

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[9] ENHANCED TAIL DIFFUSION OF ION-IMPLANTED BORON IN SILICON [J].

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[10]

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