ZNSE LIGHT-EMITTING-DIODES

被引：103

作者：

REN, J ^{[1
]}

BOWERS, KA ^{[1
]}

SNEED, B ^{[1
]}

DREIFUS, DL ^{[1
]}

COOK, JW ^{[1
]}

SCHETZINA, JF ^{[1
]}

KOLBAS, RM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the successful fabrication of ZnSe p-n junction light-emitting diodes in which Li and Cl are used as p-type and n-type dopants, respectively.

引用

页码：1901 / 1903

页数：3

共 20 条

[1] ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

MIYAJIMA, T ;

MORI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04) :L531-L534

[2] PHOTOLUMINESCENCE SPECTRA OF OXYGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

MIYAJIMA, T ;

MORI, Y .

PHYSICAL REVIEW B, 1989, 39 (05) :3138-3144

[3] LOW-TEMPERATURE GROWTH OF ZNSE BY MOLECULAR-BEAM EPITAXY USING CRACKED SELENIUM [J].

CAMMACK, DA ;

SHAHZAD, K ;

MARSHALL, T .

APPLIED PHYSICS LETTERS, 1990, 56 (09) :845-847

[4] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY [J].

CHENG, H ;

DEPUYDT, JM ;

POTTS, JE ;

SMITH, TL .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :147-149

[5]

CHENG J, 1988, J CRYST GROWTH, V95, P512

[6] A 2-ZONE MOLECULAR-BEAM EPITAXY FURNACE FOR EVAPORATION OF II-VI MATERIALS [J].

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EASON, DB ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :196-199

[7] DETECTION AND CONTROL OF IMPURITY INCORPORATION IN MBE-GROWN ZNSE [J].

DEPUYDT, JM ;

SMITH, TL ;

POTTS, JE ;

CHENG, H ;

MOHAPATRA, SK .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :318-323

[8] ELECTRICAL CHARACTERIZATION OF P-TYPE ZNSE [J].

DEPUYDT, JM ;

HAASE, MA ;

CHENG, H ;

POTTS, JE .

APPLIED PHYSICS LETTERS, 1989, 55 (11) :1103-1105

[9]

HAASE M, 1990, DARPA URI WORKSHOP W

[10] CHARACTERIZATION OF P-TYPE ZNSE [J].

HAASE, MA ;

CHENG, H ;

DEPUYDT, JM ;

POTTS, JE .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :448-452

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