INTERSUBBAND ABSORPTION IN A MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS MULTIPLE QUANTUM WELL STRUCTURE

被引：27

作者：

LOBENTANZER, H ^{[1
]}

KONIG, W ^{[1
]}

STOLZ, W ^{[1
]}

PLOOG, K ^{[1
]}

ELSAESSER, T ^{[1
]}

BAUERLE, RJ ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS E11,D-8000 MUNICH 2,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.99860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：571 / 573

页数：3

共 10 条

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[3]

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[5] NEW 10 MU-M INFRARED DETECTOR USING INTERSUBBAND ABSORPTION IN RESONANT TUNNELING GAALAS SUPERLATTICES [J].

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[6]

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[7] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

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[8] ABSORPTION-SPECTROSCOPY ON GA0.47IN0.53AS AL0.48IN0.52AS MULTI-QUANTUM-WELL HETEROSTRUCTURES .1. EXCITONIC TRANSITIONS [J].

STOLZ, W ;

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PHYSICAL REVIEW B, 1987, 36 (08) :4301-4309

[9] ABSORPTION-SPECTROSCOPY ON GA0.47IN0.53AS AL0.48IN0.52AS MULTI-QUANTUM-WELL HETEROSTRUCTURES .2. SUBBAND STRUCTURE [J].

STOLZ, W ;

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PHYSICAL REVIEW B, 1987, 36 (08) :4310-4315

[10] 1ST OBSERVATION OF AN EXTREMELY LARGE-DIPOLE INFRARED TRANSITION WITHIN THE CONDUCTION-BAND OF A GAAS QUANTUM WELL [J].

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