SURFACE STOICHIOMETRY DETERMINATION USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ATOMIC-LAYER EPITAXY - THE CASE OF ZNTE(100)

被引：30

作者：

DAUDIN, B ^{[1
]}

TATARENKO, S ^{[1
]}

CUNFF, DB ^{[1
]}

机构：

[1] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,CNRS,F-38402 ST MARTIN DHERES,FRANCE

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.52.7822

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using reflection high-energy electron diffraction analysis of the relaxation process in highly strained heterostructures grown by atomic-layer epitaxy, a method is proposed to provide a quantitative determination of the surface stoichiometry. Applying this method to the case of the ZnTe(100) surface, we have found that a c(2X2) Te-rich reconstruction observed below 240 degrees C involves 1.5 ML of Te atoms. Consistent with this result, we also propose a microscopic model for the growth of ZnTe in atomic-layer epitaxy, and we demonstrate the relationship between growth rate and surface reconstruction.

引用

页码：7822 / 7825

页数：4

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