LOW-PRESSURE MEASUREMENT LIMITS FOR SILICON PIEZORESISTIVE CIRCULAR DIAPHRAGM SENSORS

被引：15

作者：

MATSUOKA, Y

YAMAMOTO, Y

TANABE, M

SHIMADA, S

YAMADA, K

YASUKAWA, A

MATSUZAKA, H

机构：

[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN

[2] HITACHI LTD,MECH ENGN RES LAB,TSUCHIURA,IBARAKI 300,JAPAN

[3] HITACHI INSTRUMENTS ENGN CO LTD,HITACHINAKA,IBARAKI 312,JAPAN

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1995年 / 5卷 / 01期

关键词：

D O I：

10.1088/0960-1317/5/1/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lower limit to a practical measurable span is investigated for pressure sensors that have a silicon diaphragm with circular shape and employ piezoresistive gages. Output voltages and non-linearities of the sensors are analysed, taking into account the effects of the diaphragm's large deflection and the piezoresistive effect non-linearities. Based on this analysis and industrial requirements (the minimum span output voltage must be larger than 4.3 mV V-1 and non-linearities must be within +/-0.2% at the same time), it is found that the minimum span is 15 kPa.

引用

页码：32 / 35

页数：4

共 10 条

[1] A GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON [J].