ESTIMATION OF THE SURFACE-STATE DENSITY OF N-TYPE (111)A GAAS GROWN USING MOLECULAR-BEAM EPITAXY

被引：4
作者：
LOVELL, DR
TAKEBE, T
YAMAMOTO, T
INAI, M
KOBAYASHI, K
WATANABE, T
机构：
[1] ATR Optical and Radio Télécommunications Research Laboratories, Soraku-gun, Kyoto, 619-02
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 12B期
关键词：
SCHOTTKY BARRIER HEIGHT; SURFACE STATE DENSITY;
D O I：
10.1143/JJAP.31.L1740
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Schottky barrier heights of Pt, Ni and Cr on Si doped n-type GaAs, grown by molecular beam epitaxy on (111)A GaAs which was misoriented by 5-degrees toward [100], have been measured using capacitance-voltage and current-voltage techniques. The contacts were formed by metal evaporation onto GaAs which was cleaned with dilute H3PO4. By fitting a straight line to the Schottky barrier height versus metal work function data, the surface state density of the n-type epitaxial GaAs is estimated to be 4.57 x 10(13) cm-2.eV-1.
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收藏
页码：L1740 / L1742
页数：3
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