BE DOPING OF LIQUID-PHASE-EPITAXIAL INP

被引：12

作者：

ABRAMS, EB

SUMSKI, S

BONNER, WA

COLEMAN, JJ

机构：

[1] Bell Laboratories, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.326408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The distribution coefficient for Be-doped liquid-phase-epitaxial InP is determined to be kBe≈0.1. Comparison is made with other p-type and n-type impurities with regard to suitability for use in GaInPAs-InP double heterostructures.

引用

页码：4469 / 4470

页数：2

共 17 条

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