PROPERTIES OF GA1-XINXN FILMS PREPARED BY MOVPE

被引：131

作者：

NAGATOMO, T

KUBOYAMA, T

MINAMINO, H

OMOTO, O

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.L1334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1334 / L1336

页数：3

共 6 条

[1] EFFICIENT INJECTION MECHANISM FOR ELECTROLUMINESCENCE IN GAN [J].

JACOB, G ;

BOIS, D .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :412-414

[2] GAN BLUE-LIGHT EMITTING DIODES PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KAWABATA, T ;

MATSUDA, T ;

KOIKE, S .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2367-2368

[3] VIOLET LUMINESCENCE OF MG-DOPED GAN [J].

MARUSKA, HP ;

STEVENSON, DA ;

PANKOVE, JI .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :303-305

[4]

Nagatomo T., 1988, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE71, P292

[5] PREPARATION AND OPTICAL-PROPERTIES OF GA1-XINXN THIN-FILMS [J].

OSAMURA, K ;

NAKA, S ;

MURAKAMI, Y .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3432-3437

[6] FUNDAMENTAL ABSORPTION-EDGE IN GAN, INN AND THEIR ALLOYS [J].

OSAMURA, K ;

OHTSUKI, A ;

SHINGU, PH ;

MURAKAMI, Y ;

NAKAJIMA, K .

SOLID STATE COMMUNICATIONS, 1972, 11 (05) :617-&

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