A 2-DIMENSIONAL MATHEMATICAL ANALYSIS OF DIFFUSED SEMICONDUCTOR RESISTOR

被引:24
作者
KENNEDY, DP
MURLEY, PC
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D O I
10.1147/rd.123.0242
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
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页码:242 / +
页数:1
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共 26 条
[1]  
[Anonymous], RELAXATION METHODS T
[2]  
[Anonymous], 1946, RELAXATION METHODS T
[3]   CARRIER ACCUMULATION IN GERMANIUM [J].
ARTHUR, JB ;
GIBSON, AF ;
GUNN, JB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (07) :697-704
[4]   CURRENT GAIN AT L-H JUNCTIONS IN GERMANIUM [J].
ARTHUR, JB ;
GIBSON, AF ;
GUNN, JB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (07) :705-711
[5]  
BARRER RM, 1941, DIFFUSION IN THROUGH
[6]  
CRANK J, 1955, MATHEMATICS DIFFUSIO
[7]  
Davis E.M., 1958, J ELECTRON CONTR, V4, P17
[8]  
FORSYTHE GE, 1960, FINITEDIFFERENCE MET
[9]  
GRANVILLE JW, 1956, J ELECTRONICS, V1, P565
[10]  
GUNN JB, 1956, J ELECTRONICS, V2, P87