RADIATION-DAMAGE AND ANNEALING IN SB IMPLANTED DIAMOND

被引：44

作者：

BRAUNSTEIN, G ^{[1
]}

TALMI, A ^{[1
]}

KALISH, R ^{[1
]}

BERNSTEIN, T ^{[1
]}

BESERMAN, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 48卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209244

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：139 / 144

页数：6

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[7] RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS [J].

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[8] SEMICONDUCTING DIAMOND [J].

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[10]

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