EVIDENCE OF DISLOCATION JOGS IN DEFORMED SILICON

被引：123

作者：

DASH, WC

机构：

来源：

关键词：

D O I：

10.1063/1.1723255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：705 / 709

页数：5

共 13 条

[1]

Cottrell A. H., 1953, DISLOCATIONS PLASTIC

[2]

Dash W. C., 1957, DISLOCATIONS MECH PR, pp. 57

[3] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

[4]

DASH WC, 1957, B AM PHYS SOC 2, V2, P145

[5]

DASH WC, 1957, B AM PHYS SOC 2, V2, P265

[6]

FRIEDEL J, 1956, DISLOCATIONS

[7] BEHAVIOR OF OXYGEN IN PLASTICALLY DEFORMED SILICON [J].

LEDERHANDLER, S ;

PATEL, JR .

PHYSICAL REVIEW, 1957, 108 (02) :239-242

[8] EFFECT OF OXYGEN ON ETCH-PIT FORMATION IN SILICON [J].

LOGAN, RA ;

PETERS, AJ .

[9]

Read W. T., 1953, DISLOCATIONS CRYSTAL

[10]

READ WT, 1953, DISLOCATIONS CRYSTAL, P88