COMPARISON OF SURFACE-EMITTING AND EDGE-EMITTING LEDS FOR USE IN FIBER-OPTICAL COMMUNICATIONS

被引:23
作者
BOTEZ, D
ETTENBERG, M
机构
[1] RCA Laboratories, Princeton
关键词
D O I
10.1109/T-ED.1979.19584
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performance of state-of-the-art double-heterojunction (DH) surface and edge emitters are compared with respect to their use in high-data-rate fiber-optical communication systems. Thick-window (20-25-μm) surface emitters with 2-2.5-μm thick active layers and emitting up to 15-mW optical power at 300 mA have been fabricated. For edge emitters, we use very-high-radiance-type devices with ≅500-Å thick active layers. For these two types of LED's we examine differences in structure and light coupling efficiency to fibers of various numerical apertures (NA). For typically good devices we compare the diodes’ output power capabilities, the powers coupled into step- and graded-index fibers of various NA, and their respective frequency response. For the same drive current level, we find that edge emitters couple more power than surface emitters into fibers with NA ≲0.3. The edge emitters also have 5 times larger bandwidths. We estim ate that an edge emitter can couple 5–6 times more power into low numerical aperture (NA ≲0.2) fibers than a surface emitter of the same bandwidth. We conclude that edge emitters are preferred to surface emitters for optical data rates above 20 Mbits/s. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:1230 / 1238
页数:9
相关论文
共 37 条
  • [1] HIGH-EFFICIENCY LONG-LIVED GAAIAS LEDS FOR FIBER-OPTICAL COMMUNICATIONS
    ABE, M
    UMEBU, I
    HASEGAWA, O
    YAMAKOSHI, S
    YAMAOKA, T
    KOTANI, T
    OKADA, H
    TAKANASHI, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) : 990 - 994
  • [2] ANALYTICAL APPROXIMATION OF RADIATION CONFINEMENT FACTOR FOR TEO MODE OF A DOUBLE HETEROJUNCTION LASER
    BOTEZ, D
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (04) : 230 - 232
  • [3] SIMPLE EXPRESSION FOR LIGHT OUTPUT OF EDGE-EMITTING DHLEDS
    BOTEZ, D
    ZORY, P
    BRADY, MJ
    [J]. ELECTRONICS LETTERS, 1978, 14 (22) : 716 - 718
  • [4] EFFICIENT SMALL-AREA GAAS-GA1-XA1XAS HETEROSTRUCTURE ELECTROLUMINESCENT DIODES COUPLED TO OPTICAL FIBERS
    BURRUS, CA
    ULMER, EA
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08): : 1263 - &
  • [5] CROSSLEY I, 1972, J CRYST GROWTH, V15, P268, DOI 10.1016/0022-0248(72)90021-8
  • [6] DAIDO U, 1978, FUJITSU SCI TECH J, V14, P25
  • [7] PROTON BOMBARDED DOUBLE HETEROSTRUCTURE LEDS
    DYMENT, JC
    SPRINGTHORPE, AJ
    KING, FD
    STRAUS, J
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 173 - 193
  • [8] TOP AND SIDE EMISSION FROM DOUBLE HETEROSTRUCTURE LEDS AND LASERS
    DYMENT, JC
    KAPRON, FP
    SPRINGTHORPE, AJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) : 995 - 1000
  • [9] INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES
    ETTENBERG, M
    KRESSEL, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1538 - 1544
  • [10] VERY HIGH RADIANCE EDGE-EMITTING LED
    ETTENBERG, M
    KRESSEL, H
    WITTKE, JP
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (06) : 360 - 364