DOPING IN MOLECULAR LAYER EPITAXY

被引：33

作者：

NISHIZAWA, J ^{[1
]}

ABE, H ^{[1
]}

KURABAYASHI, T ^{[1
]}

机构：

[1] SEMICOND RES INST,RES DEV CORP JAPAN,NISHIZAWA PERFECT CRYSTAL PROJECT,SENDAI 980,JAPAN

来源：

关键词：

D O I：

10.1149/1.2096658

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：478 / 484

页数：7

共 19 条

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[6] DEPOSITION MECHANISM OF GAAS EPITAXY
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 945 - 951
[7] MOLECULAR LAYER EPITAXY
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[8] MECHANISM OF SURFACE-REACTION IN GAAS LAYER GROWTH
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