INTERFACIAL MICROSTRUCTURES IN INXGA1-XAS/GAAS STRAINED LAYER STRUCTURES

被引：5
作者：
YAO, JY
ANDERSSON, TG
DUNLOP, GL
机构：
来源：
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES | 1989年 / 148卷
关键词：
D O I：
10.1557/PROC-148-303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：303 / 308
页数：6
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