HIGH-FIELD ELECTRON TRAPPING IN SIO2

被引：101

作者：

SOLOMON, P ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 09期

关键词：

D O I：

10.1063/1.324253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3843 / 3849

页数：7

共 22 条

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