EPITAXIAL-GROWTH AND MAGNETIC-PROPERTIES OF FE FILMS ON SI SUBSTRATES

被引：5
作者：
YAEGASHI, S
KURIHARA, T
SATO, K
SEGAWA, H
机构：
[1] Materials Laboratory, Japan Energy Corporation, 3-17-35, Niizo-Minami
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1994年 / 30卷 / 06期
关键词：
D O I：
10.1109/20.334238
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epitaxial films were-not obtained without ade substrate bias except those on Si(111) substrates. In-plane anisotropy energy for Fe(110) plane was different from the bulk. Uniaxial anisotropy and magnetoelastic energy should beconsidered with magnetocrystalline anisotropy.
引用
收藏
页码：4836 / 4838
页数：3
相关论文
共 50 条
  • [41] EPITAXIAL-GROWTH KINETICS ON PATTERNED SUBSTRATES
    HAIDER, N
    WILBY, MR
    VVEDENSKY, DD
    APPLIED PHYSICS LETTERS, 1993, 62 (24) : 3108 - 3110
  • [42] Epitaxial growth of (100) Fe3Si thin films on insulating substrates
    Akiyama, Kensuke
    Kadowaki, Teiko
    Kaneko, Satoru
    Kyoduka, Azusa
    Sawada, Yutaka
    Funakubo, Hiroshi
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) : 1703 - 1707
  • [43] Growth and magnetic properties of Fe films on vicinal to (001) substrates
    Frank, AR
    Jorzick, J
    Rickart, M
    Bauer, M
    Fassbender, J
    Demokritov, SO
    Hillebrands, B
    Scheib, M
    Keen, A
    Petukhov, A
    Kirilyuk, A
    Rasing, T
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 6092 - 6094
  • [44] EPITAXIAL-GROWTH OF FE/MO/FE(111) AND FE/CR/FE(111) ON SI(111)
    CHENG, YT
    CHEN, YL
    JOURNAL OF MATERIALS RESEARCH, 1993, 8 (07) : 1567 - 1571
  • [45] EPITAXIAL-GROWTH OF FE-SI COMPOUNDS ON THE SILICON (111) FACE
    VINH, LT
    CHEVRIER, J
    DERRIEN, J
    PHYSICAL REVIEW B, 1992, 46 (24): : 15946 - 15954
  • [46] EPITAXIAL-GROWTH OF BAMGF4 FILMS ON SI(100) AND (111) SUBSTRATES - AN APPROACH TO FERROELECTRIC SEMICONDUCTOR HETEROSTRUCTURES
    AIZAWA, K
    ISHIWARA, H
    KUMAGAI, M
    APPLIED PHYSICS LETTERS, 1993, 63 (13) : 1765 - 1767
  • [47] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI
    HUNG, LS
    LAU, SS
    VONALLMEN, M
    MAYER, JW
    ULLRICH, BM
    BAKER, JE
    WILLIAMS, P
    TSENG, WF
    APPLIED PHYSICS LETTERS, 1980, 37 (10) : 909 - 911
  • [48] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI ON COSI2 SUBSTRATES
    DITCHEK, BM
    SALERNO, JP
    GORMLEY, JV
    APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1200 - 1202
  • [49] EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS ON SI GROWN BY MOCVD
    SOGA, T
    HATTORI, S
    SAKAI, S
    UMENO, M
    JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 498 - 502
  • [50] EPITAXIAL-GROWTH OF SILICON AND GERMANIUM FILMS ON CAF2/SI
    BARKAI, M
    LEREAH, Y
    GRUNBAUM, E
    DEUTSCHER, G
    THIN SOLID FILMS, 1986, 139 (03) : 287 - 297
12345