EPITAXIAL-GROWTH AND MAGNETIC-PROPERTIES OF FE FILMS ON SI SUBSTRATES

被引：5
|
作者：
YAEGASHI, S
KURIHARA, T
SATO, K
SEGAWA, H
机构：
[1] Materials Laboratory, Japan Energy Corporation, 3-17-35, Niizo-Minami
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1994年 / 30卷 / 06期
关键词：
D O I：
10.1109/20.334238
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epitaxial films were-not obtained without ade substrate bias except those on Si(111) substrates. In-plane anisotropy energy for Fe(110) plane was different from the bulk. Uniaxial anisotropy and magnetoelastic energy should beconsidered with magnetocrystalline anisotropy.
引用
收藏
页码：4836 / 4838
页数：3
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