Characterizations of TiO2 thin films with atmosphere control of the RF magnetron sputtering
被引:2
|
作者:
Park, Ju-Hoon
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机构:
Nambu Univ, Dept Med Engn, Gwangju 506706, South KoreaNambu Univ, Dept Med Engn, Gwangju 506706, South Korea
Park, Ju-Hoon
[1
]
Kim, Bong-Soo
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机构:
Hankuk Carbon, Seoul 121875, South KoreaNambu Univ, Dept Med Engn, Gwangju 506706, South Korea
Kim, Bong-Soo
[2
]
Kim, Byung-Hoon
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机构:
Korea Inst Sci & Technol Informat, ReSEAT Program, Seoul 130741, South KoreaNambu Univ, Dept Med Engn, Gwangju 506706, South Korea
Kim, Byung-Hoon
[3
]
机构:
[1] Nambu Univ, Dept Med Engn, Gwangju 506706, South Korea
[2] Hankuk Carbon, Seoul 121875, South Korea
[3] Korea Inst Sci & Technol Informat, ReSEAT Program, Seoul 130741, South Korea
来源:
JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY
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2011年
/
21卷
/
02期
关键词:
TiO2;
RF magnetron sputtering;
Working gas ratio;
D O I:
10.6111/JKCGCT.2011.21.2.065
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
The TiO2 films were prepared on glass, silicon and quartz substrate at different temperature by radio frequency reactive magnetron sputtering under different flow ratios of Ar and O-2 gases. The films were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-VIS spectrophotometer. Only the anatase phase was observed in films and their diffaction peaks increased with temprature of substrate. The size of crystallites decreased with higher concentration of oxygen. Refractive index and optical absorption of thin films decreased with higher concentration of oxygen. The thin films which have good transmittance spectra and smooth surface, deposited in the sputtering ambient with 10 % of O-2 at the temperature from 300(circle)C to 400(circle)C.
机构:
Kanazawa Inst Technol, OEDS Res & Dev Ctr, Nonoichi, Ishikawa 9218501, JapanKanazawa Inst Technol, OEDS Res & Dev Ctr, Nonoichi, Ishikawa 9218501, Japan
Maeda, M
Hirota, K
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机构:
Kanazawa Inst Technol, OEDS Res & Dev Ctr, Nonoichi, Ishikawa 9218501, JapanKanazawa Inst Technol, OEDS Res & Dev Ctr, Nonoichi, Ishikawa 9218501, Japan
机构:
Kanazawa Inst Technol, OEDS Res & Dev Ctr, Nonoichi, Ishikawa 9218501, JapanKanazawa Inst Technol, OEDS Res & Dev Ctr, Nonoichi, Ishikawa 9218501, Japan
Maeda, M
Hirota, K
论文数: 0引用数: 0
h-index: 0
机构:
Kanazawa Inst Technol, OEDS Res & Dev Ctr, Nonoichi, Ishikawa 9218501, JapanKanazawa Inst Technol, OEDS Res & Dev Ctr, Nonoichi, Ishikawa 9218501, Japan