STRETCHED-EXPONENTIAL DECAY OF THE LUMINESCENCE IN POROUS SILICON

被引：243
作者：
PAVESI, L
CESCHINI, M
机构：
[1] Dipartimento di Fisica, Universita' di Trento
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.48.17625
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An experimental study of the luminescence time decay in porous silicon as a function of temperature, excitation, and observation energies is reported. The decay line shape is well described by a stretched exponential for a variety of experimental conditions. A hierarchy of waiting times for carrier hopping, of intersite distances, and of site energies result from the analysis of our data
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页码：17625 / 17628
页数：4
相关论文
共 18 条
[1]  
BUSTARRET E, LIGHT EMISSION SILIC
[2]  
BVRANDT MS, 1992, SOLID STATE COMMUN, V81, P307
[3]  
CALCOTT PDJ, 1993, J PHYS CONDENS MATTE
[4]   LUMINESCENCE DECAY IN DISORDERED LOW-DIMENSIONAL SEMICONDUCTORS [J].
CHEN, X ;
HENDERSON, B ;
ODONNELL, KP .
APPLIED PHYSICS LETTERS, 1992, 60 (21) :2672-2674
[5]   STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J].
KAKALIOS, J ;
STREET, RA ;
JACKSON, WB .
PHYSICAL REVIEW LETTERS, 1987, 59 (09) :1037-1040
[6]   FRACTAL BEHAVIOR IN TRAPPING AND REACTION [J].
KLAFTER, J ;
BLUMEN, A .
JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (02) :875-877
[7]   ON THE RELATIONSHIP AMONG 3 THEORIES OF RELAXATION IN DISORDERED-SYSTEMS [J].
KLAFTER, J ;
SHLESINGER, MF .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1986, 83 (04) :848-851
[8]   ULTRAFAST DECAY DYNAMICS OF LUMINESCENCE IN POROUS SILICON [J].
MATSUMOTO, T ;
FUTAGI, T ;
MIMURA, H ;
KANEMITSU, Y .
PHYSICAL REVIEW B, 1993, 47 (20) :13876-13879
[9]  
PAVESI L, IN PRESS J APPL PHYS
[10]  
PAVESI L, IN PRESS J LUMIN
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