ABSORPTION OF LIGHT BY NONEQUILIBRIUM CARRIERS AND RECOMBINATION IN SILICON AT HIGH INJECTION LEVELS

被引：0

作者：

ASHKINADZE, BM

YAROSHET.ID

PATRIN, AA

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1972年 / 5卷 / 09期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1471 / +

页数：1

共 10 条

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[8] FREE-CARRIER ABSORPTION IN N-TYPE GE [J].

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LAX, M .

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[9]

Ryvkin S. M., 1964, PHOTOELECTRIC EFFECT

[10] INFRARED ABSORPTION IN N-TYPE SILICON [J].

SPITZER, W ;

FAN, HY .

PHYSICAL REVIEW, 1957, 108 (02) :268-271

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