STRUCTURE AND OPTICAL-PROPERTIES OF STRAINED GE-SI SUPERLATTICES GROWN ON (001) GE

被引：81

作者：

PEARSALL, TP ^{[1
]}

VANDENBERG, JM ^{[1
]}

HULL, R ^{[1
]}

BONAR, JM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.63.2104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2104 / 2107

页数：4

共 27 条

[1] SILICON GERMANIUM STRAINED LAYER SUPERLATTICES [J].

ABSTREITER, G ;

EBERL, K ;

FRIESS, E ;

WEGSCHEIDER, W ;

ZACHAI, R .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :431-438

[2]

BARTELS WJ, 1983, J VAC SCI TECHNOL B, V1, P328

[3]

BEAN JC, IN PRESS

[4] LONG-RANGE ORDER AND SEGREGATION IN SEMICONDUCTOR SUPERLATTICES [J].

CIRACI, S ;

BATRA, IP .

PHYSICAL REVIEW LETTERS, 1987, 58 (20) :2114-2117

[5] LOCAL EMPIRICAL PSEUDOPOTENTIAL APPROACH TO THE OPTICAL-PROPERTIES OF SI/GE SUPERLATTICES [J].

FRIEDEL, P ;

HYBERTSEN, MS ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1989, 39 (11) :7974-7977

[6]

FROYEN S, 1987, PHYS REV B, V36, P4574

[7] EFFECT OF BUFFER-LAYER COMPOSITION ON NEW OPTICAL-TRANSITIONS IN SI/GE SHORT-PERIOD SUPERLATTICES [J].

GELL, MA .

PHYSICAL REVIEW B, 1988, 38 (11) :7535-7553

[8] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J].

GNUTZMAN.U ;

CLAUSECK.K .

APPLIED PHYSICS, 1974, 3 (01) :9-14

[9] THEORY OF OPTICAL-TRANSITIONS IN SI/GE(001) STRAINED-LAYER SUPERLATTICES [J].

HYBERTSEN, MS ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1987, 36 (18) :9683-9693

[10]

IKEDA M, 1988, 19TH P INT C PHYS SE, P495

← 1 2 3 →