IIIA-6 ALGAAS/GAAS PNP HBT WITH 54 GHZ F(MAX) AND APPLICATION TO HIGH-PERFORMANCE COMPLEMENTARY TECHNOLOGY

被引：0
作者：
HILL, DG [1 ]
KIM, TS [1 ]
TSERNG, HQ [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期
关键词：
D O I：
10.1109/16.239784
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
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页码：2113 / 2113
页数：1
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    ENQUIST, PM
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    [J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) : 180 - 185
  • [2] FARLEY CW, IEEE IEDM 1991, P927
  • [3] HIGH-FREQUENCY PNP ALGAAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH AN ULTRATHIN STRAINED BASE
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    [J]. ELECTRONICS LETTERS, 1990, 26 (24) : 2000 - 2002
  • [4] ALGAAS/GAAS P-N-P HBTS WITH HIGH MAXIMUM FREQUENCY OF OSCILLATION
    SULLIVAN, GJ
    CHANG, MF
    SHENG, NH
    ANDERSON, RJ
    WANG, NL
    WANG, KC
    HIGGINS, JA
    ASBECK, PM
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) : 463 - 465
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