MODEL FOR 1-F NOISE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：27

|

作者：

KLEINPENNING, TGM

VANDAMME, LKJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.329647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1594 / 1596

页数：3

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