MODEL FOR 1-F NOISE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：27
作者：
KLEINPENNING, TGM
VANDAMME, LKJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 03期
关键词：
D O I：
10.1063/1.329647
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1594 / 1596
页数：3
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