PB(ZR, TI)O3 THIN-FILM PREPARATION BY MULTITARGET MAGNETRON SPUTTERING

Ferroelectric lead zirconate-titanate (PZT) thin films have been prepared on Pt-coated oxidized Si substrates (Pt/Ti/SiO2/Si) Utilizing a multitarget magnetron sputtering system with three Pb(Zr0.5, Ti0.5)O3 targets and one PbO target. Crystal structure and dielectric properties of the films have been studied as functions of substrate temperature (T(s)) and Pb content. The Pb content in the film has been precisely controlled by optimizing the rf input power for the PbO target (P(PbO)). As a result, single-phase perovskite films have been prepared fairly easily with appropriate combinations of T(s) and P(PbO). A film with atomic ratios of Pb/(Zr + Ti) = 1.3 and Zr/(Zr + Ti)=0.5 prepared at T(s)=600-degrees-C exhibited a dielectric constant of 780 and remanent polarization of 19 muC/cm2.