3-PHASE GAAS SCHOTTKY-BARRIER CCD OPERATED UP TO 100-MHZ CLOCK FREQUENCY

被引：8

作者：

ABLASSMEIER, U

KELLNER, W

HERBST, H

KNIEPKAMP, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.20003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1181 / 1183

页数：3

共 12 条

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[7] A 2-PHASE CCD ON GAAS WITH 0.3-MU-M-WIDE ELECTRODE GAPS [J].

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[9] NEW STRUCTURES FOR CHARGE-COUPLED DEVICES [J].

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[10] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J].

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