A NEW ANALYTICAL MODEL FOR SIMULATING RESIST HEATING IN ELECTRON-BEAM LITHOGRAPHY

被引：4

作者：

CUI, Z

机构：

[1] Microelectronics Research Centre, Cavendish Laboratory, Cambridge, CB3 0HE, Madingley Road

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1992年 / 25卷 / 06期

关键词：

D O I：

10.1088/0022-3727/25/6/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new analytical model has been developed on the basis of a previous model (by Abe et al) to simulate resist heating in electron beam lithography. Temperature distributions in both the resist and the substrate have been calculated for a single flash of a shaped beam and for a beam scanning a pattern, showing that the pattern size, the beam current density and the thermal conductivity of the substrate are key factors affecting the temperature rise in resist.

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页码：919 / 923

页数：5

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