STATUS OF THE GAAS METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY

被引：67
作者：
MIMURA, T
FUKUTA, M
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期
关键词：
D O I：
10.1109/T-ED.1980.19998
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1147 / 1155
页数：9
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