ADSORPTION OF TYPE-III AND TYPE-V ELEMENTS ON GAAS (110)

被引：27
作者：
VANLAAR, J
HUIJSER, A
VANROOY, TL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期
关键词：
D O I：
10.1116/1.570182
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1164 / 1167
页数：4
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共 16 条
[1]   ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS [J].
CALANDRA, C ;
MANGHI, F ;
BERTONI, CM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (11) :1911-1927
[2]   SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :631-636
[3]   SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (04) :1746-1747
[4]   SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (02) :790-796
[5]   (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1244-1248
[6]  
CHADI DJ, COMMUNICATION
[7]   PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605
[8]   INTRINSIC SURFACE STATES IN SEMICONDUCTORS .1. DIAMOND-TYPE CRYSTALS [J].
HIRABAYASHI, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (06) :1475-+
[9]   ELECTRONIC SURFACE PROPERTIES OF UHV-CLEAVED 3-5 COMPOUNDS [J].
HUIJSER, A ;
VANLAAR, J ;
VANROOY, TL .
SURFACE SCIENCE, 1977, 62 (02) :472-486
[10]  
HUIJSER A, 1978, PHYS LETT A, V65, P335
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