EPITAXIAL-GROWTH OF MGO LAYER ON Y1BA2CU3O7-Y THIN-FILM

被引：23
作者：
TANAKA, S
NAKANISHI, H
HIGAKI, K
ITOZAKI, H
机构：
[1] Itami Research Laboratories, Sumitomo Electric Industries Ltd, ltami, Hyogo, 664
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 06期
关键词：
Epitaxial growth; Mgo; Sis; Tem; Vacuum evaporation; Y[!sub]1[!/sub]Ba[!sub]2[!/sub]Cu[!sub]3[!/sub]O[!sub]7-y[!/sub;
D O I：
10.1143/JJAP.29.1059
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A MgO/Y1Ba2Cu3O7-y (YBCO) structure on a MgO(100) substrate was prepared by a reactive vacuum evaporation method. The MgO layer with (100) orientation was obtained on each of the (001) and (100) YBCO thin films at the substrate temperature of 400°C. The crystallinity of the MgO layer as a function of the MgO thickness was investigated. The rand omness of the crystallinity became smaller with a decrease in the thickness. The (100) epitaxial MgO layer without other orientations was obtained at a thickness of 5 nm. Structures of both YBCO/MgO/YBCO(001) and YBCO/MgO/YBCO(100) were studied. From the result of the cross-sectional TEM observation, it was confirmed that for both the (001) and (100) base YBCO layers, top YBCO layers with the same orientation were epitaxially grown via the intermediate MgO layer with a thickness of 5 nm. © 1990 The Japan Society of Applied Physics.
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页码：1059 / 1065
页数：7
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