INFLUENCE OF PRESSURE ON ELECTROPHYSICAL PROPERTIES OF THE INSULATING PHASE OF ELECTRON-IRRADIATED PB1-XSNXSE (X=0.25)

被引：0

作者：

DUBKOV, VP

SKIPETROV, EP

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 01期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：63 / 65

页数：3

共 36 条

[21] BAND INVERSION IN PB1-XSNXSE ALLOYS UNDER HYDROSTATIC-PRESSURE .2. GALVANOMAGNETIC PROPERTIES
MARTINEZ, G
PHYSICAL REVIEW B, 1973, 8 (10): : 4686 - 4692
[22] METAL-INSULATOR TRANSITION INDUCED BY ELECTRON-IRRADIATION IN PB1-XSNXSE (X=0,25)
BRANDT, NB
DUBKOV, VP
IVANOVA, GV
LADYGIN, EA
SKIPETROV, EP
VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1987, 28 (05): : 96 - 97
[23] INFLUENCE OF CATION AND ANION VACANCIES, COMPOSITION, FREE-CARRIERS, AND TEMPERATURE ON DIELECTRIC-PROPERTIES OF PB1-XSNXSE
BRATASHEVSKII, YA
PROZOROVSKII, VD
PYREGOV, BP
RESHIDOVA, IY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 167 - 169
[24] ENERGY OF 2-ELECTRON IMPURITY STATES OF TIN IN PB1-XSNXSE SOLID-SOLUTIONS WITH LOW VALUES OF X
ZARUBO, SV
NIKULIN, YA
GURIEVA, EA
PROKOFEVA, LV
RAVICH, YI
VINOGRADOVA, MN
ZHUKOVA, TB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1219 - 1221
[25] ELECTRICAL AND RECOMBINATION PROPERTIES OF ELECTRON-IRRADIATED PB1-XSNXTE AND PB1-YSNYSE CRYSTALS
BRUDNYI, VN
VOITSEKHOVSKII, AV
KRIVOV, MA
LILENKO, YV
PETROV, AS
POTAPOV, AI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 885 - 888
[26] ELECTRICAL AND RECOMBINATION PROPERTIES OF ELECTRON-IRRADIATED Pb1-xSnxTe AND Pb1-ySnySe CRYSTALS.
Brudnyi, V.N.
Voitsekhovskii, A.V.
Krivov, M.A.
Lilenko, Yu.V.
Petrov, A.S.
Potapov, A.I.
1978, 12 (08): : 885 - 888
[27] Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions in Pb1-xSnxSe (vol 113, 096401, 2014)
Xi, Xiaoxiang
He, Xu-Gang
Guan, Fen
Liu, Zhenxian
Zhong, R. D.
Schneeloch, J. A.
Liu, T. S.
Gu, G. D.
Du, X.
Chen, Z.
Hong, X. G.
Ku, Wei
Carr, G. L.
PHYSICAL REVIEW LETTERS, 2014, 113 (17)
[28] INVESTIGATION OF PHOTOELECTRIC PROPERTIES OF P-N STRUCTURES ON PB1-XSNXTE (X=0,2) AND PB1-XSNXSE (X=0,03-0,07) MONOCRYSTALS
ANTONOV, VB
KURBANOVA, EI
SALAYEV, EY
IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1979, (04): : 45 - 51
[29] ELECTROPHYSICAL PROPERTIES OF P-PB1-XSNXTE (X = 0.2) AFTER HARD ELECTRON-IRRADIATION
NEKRASOVA, AN
PELEKHOV, DV
SIDOROV, VI
SKIPETROV, EP
INORGANIC MATERIALS, 1992, 28 (12) : 1934 - 1937
[30] INFLUENCE OF THE INDIUM IMPURITY ON THE ELECTROPHYSICAL PROPERTIES OF PB1-XSNX TE WITH X GREATER-THAN 0.3
ANDRONIK, KI
BOIKO, MP
NIKORICH, AV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (05): : 472 - 475

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