Instability of surface waves at their interaction with a charged particle flux in semiconductor structure

被引:0
|
作者
Kravchenko, V., I [1 ,2 ]
Yakovenko, I., V [2 ,3 ]
Losev, F., V [2 ]
机构
[1] Natl Tech Univ, Kharkiv Polytech Inst, Res & Design Inst Molniya, Tech Sci, 47 Shevchenko St, UA-61013 Kharkov, Ukraine
[2] Natl Tech Univ, Kharkiv Polytech Inst, Res & Design Inst Molniya, UA-61013 Kharkov, Ukraine
[3] Natl Tech Univ, Kharkiv Polytech Inst, Res & Design Inst Molniya, Sci, UA-61013 Kharkov, Ukraine
关键词
conducting elements; electromagnetic radiation; currents; interaction model; instability increment; electric radio apparatus;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper presents an analytical model of an interaction mechanism for currents arising due to action of electromagnetic radiation in current conducting elements of electric radio apparatus with inner electromagnetic oscillations of metal dielectric - semiconductor structures. An instability increment that results from this interaction and specifies oscillation excitation in a submillimeter range is determined.
引用
收藏
页码:64 / +
页数:4
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