TRANSIENT PHOTO-EMF DUE TO IONIZATION OF IMPURITY CENTERS IN A SPACE-CHARGE LAYER

被引：0

作者：

KOTINA, IM

NOVIKOV, SR

MAZURIK, NE

KHUSAINO.AK

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来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 3卷 / 03期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：362 / &

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[1] EFFECT OF OPTICAL CHARGE-EXCHANGE IN IMPURITY CENTERS ON THE PHOTO-EMF KINETICS IN GERMANIUM
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[7] BARRIER-LAYER PHOTO-EMF UNDER CONDITIONS OF HEATING OF CHARGE CARRIERS BY LIGHT.
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[8] CURRENT DUE TO RECOMBINATION VIA MULTILEVEL CENTERS IN THE SPACE-CHARGE LAYER OF A P-N STRUCTURE
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[9] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .2. RECOMBINATION CENTERS IN SURFACE SPACE-CHARGE LAYER
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