NEW APPROACHES TO EPITAXY OF TRANSITION-METALS AND RARE-EARTHS - HETEROEPITAXY ON LATTICE-MATCHED BUFFER FILMS ON SEMICONDUCTORS

被引：43
作者：
FARROW, RFC
PARKIN, SSP
SPERIOSU, VS
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期
关键词：
D O I：
10.1063/1.342404
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：5315 / 5320
页数：6
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