REDUCTION OF RECOMBINATION CURRENT IN CDTE/CDS SOLAR-CELLS

被引：32

作者：

OMAN, DM

DUGAN, KM

KILLIAN, JL

CEEKALA, V

FEREKIDES, CS

MOREL, DL

机构：

[1] Electrical Engineering Department, University of South Florida, Tampa

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

Calculations - Current voltage characteristics - Electric resistance - Energy gap - Quantum efficiency - Semiconducting cadmium compounds;

D O I：

10.1063/1.114369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of the current-voltage behavior of recombination current in CdTe/CdS solar cells has shown that the reverse saturation current, J(0), and the diode quality factor, A, are correlated. Our better devices typically have low values of both A and J(0). Spectral response data indicate that devices with a gradual decline in quantum efficiency beginning at about 600 nm show better performance than devices with a sharp drop at the CdS band gap of 510 nm, which is interpreted as an indication that mixing between CdS and CdTe during processing reduces the amount of recombination current at the interface. (C) 1995 American Institute of Physics.

引用

页码：1896 / 1898

页数：3

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