SEMICONDUCTING BEHAVIOR IN ANTIMONY-DOPED BISMUTH-FILMS

被引：8
|
作者：
DAS, VD
JAGADEESH, MS
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 01期
关键词：
Compendex;
D O I：
10.1116/1.571022
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SEMICONDUCTOR MATERIALS
引用
收藏
页码：89 / 92
页数：4
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