EFFECT OF A VALENCE-BAND BARRIER ON THE QUANTUM EFFICIENCY AND BACKGROUND-LIMITED DYNAMIC RESISTANCE OF COMPOSITIONALLY GRADED HGCDTE P-ON-N HETEROJUNCTION PHOTODIODES

被引：13

作者：

WEILER, MH

REINE, MB

机构：

[1] Loral Infrared and Imaging Systems, Inc., Lexington, 02173, MA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 09期

关键词：

BAND OFFSET; HETEROJUNCTIONS; KGCDTE; QUANTUM EFFICIENCY;

D O I：

10.1007/BF02653092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new analytical model for the bias-dependent quantum efficiency of a HgCdTe P-on-n heterojunction photodiode with a valence band barrier elucidates the important physics of the phenomenon and shows that the background-induced shunt resistance is a result of the same mechanism, that is, a tendency of the light-induced carriers to pile up in the base layer due to the retarding field produced by the barrier. A parameterized version of the model agrees well with experimental current-vs-voltage and noise measurements.

引用

页码：1329 / 1339

页数：11