A NEW RECOIL IMPLANTATION IN SI USING ELECTRON-BOMBARDMENT

Experimental results for the introduction of aluminum impurities into Si are described. The technique employs an Al sheet in contact with the Si surface which is bombarded with high energy electrons. The surfaces of the Al sheet in contact with the B-doped Si wafer were exposed to a dose of approximately 2 multiplied by 10**1**7 electrons/cm**2 at 10 Mev. They were put in a running water bath in order to protect them from any temperature rise. Intensity ratios of **2**7Al** plus ions to **2**8Si** plus ions from approximately 6 multiplied by 10** minus **4 to approximately 10** minus **4 were measured as a function of depth (0-700 A) from the Si surface by secondary ion mass spectrometry. This technique is useful for the impurity doping of semiconductors.