ALTERNATIVE MECHANISM FOR SUBSTRATE MINORITY-CARRIER INJECTION IN MOS DEVICES OPERATING IN LOW-LEVEL AVALANCHE

被引:19
作者
CHILDS, PA
ECCLESTON, W
STUART, RA
机构
关键词
D O I
10.1049/el:19810197
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:281 / 282
页数:2
相关论文
共 10 条
[1]  
CHATTERJEE PK, 1979, IEDM, P14
[2]   PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1956, 102 (02) :369-376
[3]  
ELMANSY YA, 1975, IEDM, P31
[4]   ELECTRICAL MECHANISM FOR HOLDING TIME DEGRADATION IN DYNAMIC MOS RAMS [J].
FURUYAMA, T ;
OHUCHI, K ;
KOHYAMA, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1684-1690
[5]  
KAMATA T, 1976, JAPAN J APPL PHYS, V16, P1127
[6]   NONTHERMAL CARRIER GENERATION IN MOS STRUCTURES [J].
KOHYAMA, S ;
FURUYAMA, T ;
MIMURA, S ;
IIZUKA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :85-92
[7]   INFLUENCE OF SUBSTRATE CURRENT ON HOLD-TIME CHARACTERISTICS OF DYNAMIC MOS ICS [J].
KUDOH, O ;
TSURUMI, M ;
YAMANAKA, H ;
WADA, T .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (02) :235-239
[8]   EVIDENCE FOR IMPACT-IONIZED ELECTRON INJECTION IN SUBSTRATE OF N-CHANNEL MOS STRUCTURES [J].
MATSUNAGA, J ;
KOHYAMA, S .
APPLIED PHYSICS LETTERS, 1978, 33 (04) :335-337
[9]   DESIGN LIMITATIONS DUE TO SUBSTRATE CURRENTS AND SECONDARY IMPACT IONIZATION ELECTRONS IN NMOS LSIS [J].
MATSUNAGA, J ;
KOHYAMA, S ;
KONAKA, M ;
IIZUKA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :93-97
[10]   LOW-LEVEL AVALANCHE MULTIPLICATION IN IGFETS [J].
TROUTMAN, RR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :419-425