IMPOSING THE BOUNDARY-CONDITION IN A METHOD FOR TREATING QUANTUM-WELL WIRES

被引:1
作者
BROWNSTEIN, KR
机构
[1] Dept. of Phys. and Astron., Maine Univ., 5709 Bennett Hall, Orono, ME 04469-5709, United States
关键词
Binding energy - Semiconductor quantum wells - Semiconductor quantum wires - Wire;
D O I
10.1088/0953-4075/26/8/001
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A recent calculation by Tsonchev and Goodfriend of the binding energy of a hydrogenic impurity in a quantum well wire employs a novel method of imposing the boundary condition at only a finite number of lines on the surface of the wire. We point out that, in several cases, the boundary condition in reality is imposed everywhere on the surface of the wire. In these cases, the approximation aspect of the method proves to be illusory in the sense that the imposition of the boundary condition is exact.
引用
收藏
页码:L209 / L211
页数:3
相关论文
共 2 条
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DIAMOND, JJ ;
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JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1991, 24 (17) :3669-3684
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TSONCHEV, SI ;
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JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1992, 25 (22) :4685-4691