PROPERTIES OF NOBLE-METAL SILICON JUNCTIONS

被引：43
作者：
CROS, A [1 ]
MURET, P [1 ]
机构：
[1] CNRS,LEPES,F-38042 GRENOBLE,FRANCE
来源：
MATERIALS SCIENCE REPORTS | 1992年 / 8卷 / 6-7期
关键词：
D O I：
10.1016/0920-2307(92)90004-K
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We review the properties of noble-metal layers deposited on silicon substrates. The microscopic properties of the interface are presented. The relevance of these results to macroscopic phenomena like diffusion, adherence of the metal layer and electrical properties of the junctions is discussed.
引用
收藏
页码：271 / 367
页数：97
相关论文
共 426 条
[71]   OUTDIFFUSION OF SI THROUGH GOLD-FILMS - THE EFFECTS OF SI ORIENTATION, GOLD DEPOSITION TECHNIQUES AND RATES, AND ANNEALING AMBIENTS [J].
CHANG, CA ;
OTTAVIANI, G .
APPLIED PHYSICS LETTERS, 1984, 44 (09) :901-903
[72]   FORMATION OF COPPER SILICIDES FROM CU(100)/SI(100) AND CU(111)/SI(111) STRUCTURES [J].
CHANG, CA .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :566-569
[73]   TRANSMISSION ELECTRON-MICROSCOPY OF GOLD-SILICON INTERACTIONS ON THE BACKSIDE OF SILICON-WAFERS [J].
CHANG, PH ;
BERMAN, G ;
SHEN, CC .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1473-1477
[74]   STATES AT EPITAXIAL NISI2/SI HETEROJUNCTIONS STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND HYDROGENATION [J].
CHANTRE, A ;
LEVI, AFJ ;
TUNG, RT ;
DAUTREMONTSMITH, WC ;
ANZLOWAR, M .
PHYSICAL REVIEW B, 1986, 34 (06) :4415-4418
[75]   ANOMALIES IN SCHOTTKY DIODE IV CHARACTERISTICS [J].
CHEKIR, F ;
LU, GN ;
BARRET, C .
SOLID-STATE ELECTRONICS, 1986, 29 (05) :519-522
[76]   IMPROVED SCHOTTKY CAPACITANCE SPECTROSCOPY METHOD FOR THE STUDY OF INTERFACE STATES IN METAL-SEMICONDUCTOR JUNCTIONS [J].
CHEKIR, F ;
BARRET, C .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1212-1214
[77]   TUNNELING IMAGES OF GALLIUM ON A SILICON SURFACE - RECONSTRUCTIONS, SUPERLATTICES, AND INCOMMENSURATION [J].
CHEN, DM ;
GOLOVCHENKO, JA ;
BEDROSSIAN, P ;
MORTENSEN, K .
PHYSICAL REVIEW LETTERS, 1988, 61 (25) :2867-2870
[78]   EVIDENCE FOR MULTIPLE BARRIER HEIGHTS IN P-TYPE PTSI SCHOTTKY-BARRIER DIODES FROM I-V-T AND PHOTORESPONSE MEASUREMENTS [J].
CHIN, VWL ;
GREEN, MA ;
STOREY, JWV .
SOLID-STATE ELECTRONICS, 1990, 33 (02) :299-308
[79]   DIRECT AND INVERSE SURFACE PHOTOEMISSION - SOURCES OF AMBIGUITIES NEAR THE FERMI LEVEL [J].
CLAUBERG, R ;
FRANK, KH ;
NICHOLLS, JM ;
REIHL, B .
SURFACE SCIENCE, 1987, 189 :44-49
[80]  
COHEN SS, 1986, VLSI ELECTRONIC MICR, V13
3456789101112