PROPERTIES OF NOBLE-METAL SILICON JUNCTIONS

被引：43
作者：
CROS, A [1 ]
MURET, P [1 ]
机构：
[1] CNRS,LEPES,F-38042 GRENOBLE,FRANCE
来源：
MATERIALS SCIENCE REPORTS | 1992年 / 8卷 / 6-7期
关键词：
D O I：
10.1016/0920-2307(92)90004-K
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We review the properties of noble-metal layers deposited on silicon substrates. The microscopic properties of the interface are presented. The relevance of these results to macroscopic phenomena like diffusion, adherence of the metal layer and electrical properties of the junctions is discussed.
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页码：271 / 367
页数：97
相关论文
共 426 条
[1]   PHOTOEMISSION INVESTIGATION OF SI(111)-CU INTERFACES [J].
ABBATI, I ;
GRIONI, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :631-635
[2]   INTERACTION OF OXYGEN WITH SILICON D-METAL INTERFACES - A PHOTOEMISSION INVESTIGATION [J].
ABBATI, I ;
ROSSI, G ;
CALLIARI, L ;
BRAICOVICH, L ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :409-412
[3]   SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].
ABBINK, HC ;
BROUDY, RM ;
MCCARTHY, GP .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&
[4]   SCHOTTKY-BARRIER HEIGHTS OF TI AND TISI2 ON N-TYPE AND P-TYPE SI(100) [J].
ABOELFOTOH, MO ;
TU, KN .
PHYSICAL REVIEW B, 1986, 34 (04) :2311-2318
[5]   SCHOTTKY-BARRIER BEHAVIOR OF COPPER AND COPPER SILICIDE ON N-TYPE AND P-TYPE SILICON [J].
ABOELFOTOH, MO ;
CROS, A ;
SVENSSON, BG ;
TU, KN .
PHYSICAL REVIEW B, 1990, 41 (14) :9819-9827
[6]   ATOMIC CONFIGURATION OF HYDROGENATED AND CLEAN SI(110) SURFACES [J].
AMPO, H ;
MIURA, S ;
KATO, K ;
OHKAWA, Y ;
TAMURA, A .
PHYSICAL REVIEW B, 1986, 34 (04) :2329-2335
[7]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+
[8]  
[Anonymous], SITZ BER AKAD WI MNW
[9]  
[Anonymous], 1958, CONSTITUTION BINARY
[10]  
[Anonymous], ELECTRONIC STRUCTURE
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