INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES

被引：238
作者：
JOHNSON, WC
PANOUSIS, PT
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1971年 / ED18卷 / 10期
关键词：
D O I：
10.1109/T-ED.1971.17311
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：965 / &
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