Evaluation of Polishing-Induced Subsurface Damage of 4H-SiC (0001) by Cross-Sectional Electron Backscattered Diffraction and Synchrotron X-Ray Micro-Diffraction

被引:0
|
作者
Ashida, Koji [1 ,2 ]
Dojima, Daichi [1 ]
Kutsuma, Yasunori [1 ]
Torimi, Satoshi [3 ]
Nogami, Satoru [3 ]
Imai, Yasuhiko [4 ]
Kimura, Shigeru [4 ]
Mizuki, Jun-ichiro [1 ]
Ohtani, Noboru [1 ]
Kaneko, Tadaaki [1 ]
机构
[1] Kwansei Gakuin Univ, Sch Sci & Technol, 2-1 Gakuen, Sanda, Hyogo 6691337, Japan
[2] Japan Soc Promot Sci, Tokyo, Japan
[3] Toyo Tanso Corp, 2181-2 Nakahime, Kanonji, Kagawa 7691612, Japan
[4] JASRI SPring 8, 1-1-1 Koto, Sayo, Hyogo 6795198, Japan
来源
MRS ADVANCES | 2016年 / 1卷 / 55期
关键词
D O I
10.1557/adv.2016.433
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The range of polishing-induced subsurface damage remaining in a commercially available production grade 4H-SiC (0001) epi-ready substrate was evaluated by the observation from the (-1100) cleavage plane using two kinds of highly strain-sensitive characterization methods. Firstly, the analysis using electron backscattered diffraction (EBSD) with a submicron spatial resolution was conducted on the exposed cross sectional plane. Then, for the further quantitative evaluation excluding the influence of roughness or contamination of the cleavage plane, a synchrotron X-ray micro-diffraction experiment was carried out. The range of the subsurface damage evaluated in those experiments was ensured by confirming none of additional strain inserted at the cleavage, as compared with the damage-free substrate prepared by high temperature thermal etching. As a result, the depth of the residual strained region below polishing-induced scratches at the surface was estimated to be in the range of a few microns, which is much deeper than the previously reported value of 100 nm by cross-sectional transmission electron microscopy. It suggests a potential of EBSD for the conventional tool to characterize even a small amount of strain in SiC single crystal.
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页码:3697 / 3702
页数:6
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