PROCESS DEPENDENCE OF HOLE TRAPPING IN NITRIDED SIO2-FILMS

被引：0

作者：

SEVERI, M

IMPRONTA, M

DORI, L

GUERRI, S

机构：

来源：

JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期

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D O I：

10.1051/jphyscol:1988488

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学科分类号：

摘要：

引用

页码：417 / 420

页数：4

共 11 条

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[9] DISTRIBUTION OF NITROGEN AND DEFECTS IN SIOXNY/SI STRUCTURES FORMED BY THE THERMAL NITRIDATION OF SIO2/SI [J].

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