REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS

被引：327

作者：

CSEPREGI, L

KENNEDY, EF

GALLAGHER, TJ

MAYER, JW

SIGMON, TW

机构：

[1] CAL TECH,PASADENA,CA 91125

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4234 / 4240

页数：7

共 11 条

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[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

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MAYER, JW ;

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[4]

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[5] ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI [J].

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[8] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[9] ENERGY-DEPENDENCE OF HE+ AND H+ CHANNELING IN SI OVERLAID WITH AU FILMS [J].

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MAYER, JW .

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[10] MEASUREMENT OF PB+ ION COLLECTION IN SI BY HIGH DEPTH-RESOLUTION RUTHERFORD BACKSCATTERING [J].

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PHYSICS LETTERS A, 1975, A 51 (02) :85-86

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