RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE

被引：50

作者：

FULKS, RT

RUSSO, CJ

HANLEY, PR

KAMINS, TI

机构：

[1] VARIAN ASSOCIATES,DIV EXTR,PALO ALTO,CA 94303

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：604 / 606

页数：3

共 18 条

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TSAUR, BY .

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[2]

FERRIS SD, 1979, 1978 AIP C P

[3]

Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[4]

FULKS RT, 1981, 23RD ANN EL MAT C SA

[5]

Hill C., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P361

[6] ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES [J].

KAMINS, TI ;

ROSE, PH .

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[7] SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS [J].

LAU, SS ;

ALLMEN, MV ;

GOLECKI, I ;

NICOLET, MA ;

KENNEDY, EF ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :327-329

[8] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J].

LIETOILA, A ;

GIBBONS, JF ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :765-768

[9] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J].

NISHIYAMA, K ;

ARAI, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L563-L566

[10] ACTIVATION OF ARSENIC-IMPLANTED SILICON USING AN INCOHERENT-LIGHT SOURCE [J].

POWELL, RA ;

YEP, TO ;

FULKS, RT .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :150-152

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