SILICON SURFACE CONTAMINATION - POLISHING AND CLEANING

被引：25

作者：

MEEK, RL ^{[1
]}

BUCK, TM ^{[1
]}

GIBBON, CF ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1149/1.2403670

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1241 / 1246

页数：6

共 23 条

[1] ADAMS AC, 1970, MAY EL SOC M LOS ANG
[2] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING
BOGH, E
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &
[3] BUCK TM, 1970, NBS337 SPEC PUBL
[4] BUCK TM, IN PRESS
[5] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING
DAVIES, JA
DENHARTO.J
ERIKSSON, L
MAYER, JW
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &
[6] RUTHERFORD SCATTERING AND CHANNELING - USEFUL COMBINATION FOR STUDYING CRYSTAL SURFACES
DAVIES, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03): : 487 - &
[7] Herzog A.H., 1965, Process for Polishing Semiconductor Materials, Patent No. [3170273A, 3170273]
[8] KANE PF, 1970, CHARACTERIZATION SEM
[9] DIE REINHEIT DER CHEMIKALIEN IN HINSICHT AUF DIE PRODUKTION VON HALBLEITERBAUELEMENTEN .2.
KEILER, D
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (06) : 605 - 610
[10] KERN W, 1970, RCA REV, V31, P187