Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA) MOSFET using center potential

被引：26
作者：
Pradhan, K. P. [1 ]
Kumar, M. R. [1 ]
Mohapatra, S. K. [1 ]
Sahu, P. K. [1 ]
机构：
[1] NIT, Dept Elect Engn, Rourkela 769008, Odisha, India
来源：
AIN SHAMS ENGINEERING JOURNAL | 2015年 / 6卷 / 04期
关键词：
Cylindrical Gate All Around (CGAA) MOSFET; Surface potential; Center potential; Threshold voltage; Short channel effects (SCEs);
D O I：
10.1016/j.asej.2015.04.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, an analytical threshold voltage model is proposed for a cylindrical gate-all-around (CGAA) MOSFET by solving the 2-D Poisson's equation in the cylindrical coordinate system. A comparison is made for both the center and the surface potential model of CGAA MOSFET. This paper claims that the calculation of threshold voltage using center potential is more accurate rather than the calculation from surface potential. The effects of the device parameters like the drain bias (V-DS), oxide thickness (t(ox)), channel thickness (r), etc., on the threshold voltage are also studied in this paper. The model is verified with 3D numerical device simulator Sentaurus from Synopsys Inc. (C) 2015 Faculty of Engineering, Ain Shams University. Production and hosting by Elsevier B.V.
引用
收藏
页码：1171 / 1177
页数：7
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