INSITU CHARACTERIZATION OF THE INITIAL GROWTH STAGE OF GAAS ON SI BY COAXIAL IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY

被引：9

作者：

HASHIMOTO, A ^{[1
]}

SUGIYAMA, N ^{[1
]}

TAMURA, M ^{[1
]}

机构：

[1] TOSHIBA CO LTD,TOSHIBA RES & DEV CTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

INSITU CHARACTERIZATION; INITIAL GROWTH STAGE; GAAS ON SI; CAICISS;

D O I：

10.1143/JJAP.30.3755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial growth stage of GaAs on Si has been characterized in situ by coaxial impact-collision ion scattering spectroscopy (CAICISS). The behavior of As atoms on the Si surface and at the step sites is analyzed. The results of analysis on the initial growth stage strongly suggest that the three-dimensional island growth of GaAs on Si occurs even in 1-monolayer (ML) GaAs growth.

引用

页码：3755 / 3758

页数：4

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